IEEE - Institute of Electrical and Electronics Engineers, Inc. - Advances in Gallium Nitride-based Electronics

2007 IEEE International Conference on Electron Devices and Solid-State Circuits - EDSSC '07

Author(s): I. Adesida ; V. Kumar
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2007
Conference Location: Tainan, Taiwan
Conference Date: 20 December 2007
Page(s): 1 - 6
ISBN (CD): 978-1-4244-0637-1
ISBN (Paper): 978-1-4244-0636-4
DOI: 10.1109/EDSSC.2007.4450046
Regular:

The III -nitrides AIN, GaN, InN and their alloys are a novel family of semiconductor materials for optoelectronics as well as for electronics. GaN-based high electron mobility transistors (HEMTs)... View More

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