IEEE - Institute of Electrical and Electronics Engineers, Inc. - Narrow spectral linewidth of al-free active region DFB laser diodes operating at 852nm

2007 Quantum Electronics and Laser Science Conference

Author(s): V. Ligeret ; S. Bansropun ; M. Lecomte ; M. Calligaro ; O. Parillaud ; M. Krakowski
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Baltimore, MD, USA, USA
Conference Date: 6 May 2007
Page(s): 1 - 2
ISBN (CD): 978-1-55752-834-6
DOI: 10.1109/QELS.2007.4431385
Regular:

We have developed single frequency and single spatial mode laser structures with stable narrow linewidth (<1MHz) and high optical power (40mW), using an aluminium free active region for Cs... View More

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