IEEE - Institute of Electrical and Electronics Engineers, Inc. - Structural dependence of optical gain and carrier losses in InGaN quantum well lasers

2007 Quantum Electronics and Laser Science Conference

Author(s): J. Hader ; J.V. Moloney ; S.W. Koch
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Baltimore, MD, USA, USA
Conference Date: 6 May 2007
Page(s): 1 - 2
ISBN (CD): 978-1-55752-834-6
DOI: 10.1109/QELS.2007.4431372
Regular:

Using fully microscopic models it is shown that piezoelectric fields in InGaN/GaN quantum well structures lead to complex structural dependencies of the optical gain and carrier losses resulting... View More

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