IEEE - Institute of Electrical and Electronics Engineers, Inc. - Carrier Concentration and Junction Temperature Dependencies of Illumination Efficiency of GaN Power Light-Emitting Diodes

2007 Quantum Electronics and Laser Science Conference

Author(s): Michael P. Liao
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Baltimore, MD, USA, USA
Conference Date: 6 May 2007
Page(s): 1 - 2
ISBN (CD): 978-1-55752-834-6
DOI: 10.1109/QELS.2007.4431328
Regular:

Pulsed drive currents have helped us separate the effects that junction temperature and carrier concentration have on current-induced efficiency degradation of GaN Power LEDs. Carrier... View More

Advertisement