IEEE - Institute of Electrical and Electronics Engineers, Inc. - Negative bi-exciton binding energy in (211)B InAs/GaAs piezoelectric quantum dots

2007 Quantum Electronics and Laser Science Conference

Author(s): G.E. Dialynas ; C. Xenogianni ; E. Trichas ; P.G. Savvidis ; G. Constantinidis ; Z. Hatzopoulos ; N.T. Pelekanos
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Baltimore, MD, USA, USA
Conference Date: 6 May 2007
Page(s): 1 - 2
ISBN (CD): 978-1-55752-834-6
DOI: 10.1109/QELS.2007.4431291
Regular:

We report on isolated dot spectroscopy of polar (211)InAs/GaAs quantum dots grown by MBE. Exciton and biexciton peaks have been identified, revealing a negative biexciton binding energy attributed... View More

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