IEEE - Institute of Electrical and Electronics Engineers, Inc. - Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study

2007 Quantum Electronics and Laser Science Conference

Author(s): Zhiya Zhao ; Kevin R. Lantz ; Changhyun Yi ; Adrienne D. Stiff-Roberts
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Baltimore, MD, USA, USA
Conference Date: 6 May 2007
Page(s): 1 - 2
ISBN (CD): 978-1-55752-834-6
DOI: 10.1109/QELS.2007.4431210
Regular:

Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to... View More

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