IEEE - Institute of Electrical and Electronics Engineers, Inc. - Temperature dependence of ultrafast laser ablation efficiency of crystalline silicon

2007 Quantum Electronics and Laser Science Conference

Author(s): J. S. Yahng ; S. C. Jeoung
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 May 2007
Conference Location: Baltimore, MD, USA, USA
Conference Date: 6 May 2007
Page(s): 1 - 2
ISBN (CD): 978-1-55752-834-6
DOI: 10.1109/QELS.2007.4431172
Regular:

Ultrafast laser ablation of crystalline silicon was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent decrease in ablation threshold and... View More

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