IEEE - Institute of Electrical and Electronics Engineers, Inc. - Towards the modeling of gaas based 850 nm VCSEL with oxide confinement

TENCON 2007 - 2007 IEEE Region 10 Conference

Author(s): S.M. Mitani ; M.S. Alias ; M.R. Yahya ; A.F.A. Mat
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Taipei, Taiwan
Conference Date: 30 October 2007
Page(s): 1 - 4
ISBN (CD): 978-1-4244-1272-3
ISBN (Paper): 978-1-4244-1271-6
DOI: 10.1109/TENCON.2007.4428872
Regular:

The paper presents the structure for an oxide confined vertical cavity surface- emitting laser (VCSEL) and the simulation results for its operation at 850 nm of the electromagnetic spectrum. In... View More

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