IEEE - Institute of Electrical and Electronics Engineers, Inc. - Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth

International Semiconductor Device Research Symposium

Author(s): Tsung-ta Ho ; Bangzhi Liu ; S. Eichfeld ; Kok-Keong Lew ; S. Mohney ; J. Redwing ; T. Mayer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2007
Conference Location: College Park, MD, USA
Conference Date: 12 December 2007
Page(s): 1 - 2
ISBN (CD): 978-1-4244-1892-3
ISBN (Paper): 978-1-4244-1891-6
DOI: 10.1109/ISDRS.2007.4422515
Regular:

This paper discusses the oxidation of p- and n-type silicon nanowires (SiNWs) grown by the vapor-liquid-solid (VLS) method and their integration into top-gated FETs. The oxidization of the... View More

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