IEEE - Institute of Electrical and Electronics Engineers, Inc. - The influence of substrate atomic step morphology on threading dislocation distributions in iii-nitride films

International Semiconductor Device Research Symposium

Author(s): Y.N. Picard ; J.D. Caldwell ; M.E. Twigg ; C.R. Eddy ; M.A. Mastro ; R.L. Henry ; R.T. Holm ; P.G. Neudeck ; A.J. Trunek ; J.A. Powelld
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2007
Conference Location: College Park, MD, USA
Conference Date: 12 December 2007
Page(s): 1 - 2
ISBN (CD): 978-1-4244-1892-3
ISBN (Paper): 978-1-4244-1891-6
DOI: 10.1109/ISDRS.2007.4422505
Regular:

In this study, we investigated the influence of atomic step morphologies of 4H-SiC surfaces on the distribution of threading edge and screw dislocations in GaN films grown by MOCVD. Electron... View More

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