IEEE - Institute of Electrical and Electronics Engineers, Inc. - Design and optimization of the SOI field effect diode (FED)

International Semiconductor Device Research Symposium

Author(s): Yang Yang ; A.A. Salman ; D.E. Ioannou ; S.G. Beebe
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2007
Conference Location: College Park, MD, USA
Conference Date: 12 December 2007
Page(s): 1 - 2
ISBN (CD): 978-1-4244-1892-3
ISBN (Paper): 978-1-4244-1891-6
DOI: 10.1109/ISDRS.2007.4422443
Regular:

This article deals with the importance of the structure of FED, that lies in the fact that by appropriately biasing it, its operation can be switched between SCR-like and diode-like. For devices... View More

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