IEEE - Institute of Electrical and Electronics Engineers, Inc. - Exploring the design space of rugged seven lithographic level silicon carbide vertical JFETs for the development of 1200-V, 50-A devices

International Semiconductor Device Research Symposium

Author(s): V. Veliadis ; M. McCoy ; E. Stewart ; T. McNutt ; S. Van Campen ; P. Potyraj ; C. Scozzie
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2007
Conference Location: College Park, MD, USA
Conference Date: 12 December 2007
Page(s): 1 - 2
ISBN (CD): 978-1-4244-1892-3
ISBN (Paper): 978-1-4244-1891-6
DOI: 10.1109/ISDRS.2007.4422415
Regular:

Silicon carbide (SiC) is ideally suited for power conditioning applications due to its high saturated drift velocity, its mechanical strength, its excellent thermal conductivity, and its high... View More

Advertisement