IEEE - Institute of Electrical and Electronics Engineers, Inc. - Barrier height modulation and dipole moments in metal-molecule-silicon diodes

International Semiconductor Device Research Symposium

Author(s): A. Scott ; C. Risko ; M.A. Ratner ; D.B. Janes
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 2007
Conference Location: College Park, MD, USA
Conference Date: 12 December 2007
Page(s): 1 - 2
ISBN (CD): 978-1-4244-1892-3
ISBN (Paper): 978-1-4244-1891-6
DOI: 10.1109/ISDRS.2007.4422248
Regular:

In this study, Schottky barrier height in a series of gold-molecule-n Si diodes has been determined by reverse-bias capacitance-voltage measurements. Trends in measured barrier height correlate... View More

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