IEEE - Institute of Electrical and Electronics Engineers, Inc. - Investigation into sub-threshold performance of double-gate accumulation-mode SOI PMOSFET

2007 7th International Conference on ASIC Proceeding

Author(s): Zhang Zhengfan ; Li Zhaoji ; Tan Kaizhou ; Zhang Jiabin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Guilin, China
Conference Date: 22 October 2007
Page(s): 1,150 - 1,153
ISBN (CD): 978-1-4244-1132-0
ISBN (Paper): 978-1-4244-1131-3
DOI: 10.1109/ICASIC.2007.4415837
Regular:

In this paper, an analytical model of sub-threshold swing for the double-gate accumulation-mode P-channel SOI MOSFET is described. The model is based on Possion's equation and depletion... View More

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