IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study on high field transfer curves of GMR heads with damaged pinned layer by ESD

29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

Author(s): K. Kataoka ; T. Ohtsu ; K. Nishioka ; N. Koyama ; H. Tanaka ; Sam Luo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2007
Conference Location: Anaheim, CA, USA
Conference Date: 16 September 2007
ISBN (Paper): 978-1-58537-136-5
DOI: 10.1109/EOSESD.2007.4401739
Regular:

In order to study the effect of ESD on antiferromagnetic layer of GMR heads, transfer curves of GMR heads using high-field QST (quasi static tester) were investigated. Transfer curves of GMR heads... View More

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