IEEE - Institute of Electrical and Electronics Engineers, Inc. - Boron Diffusion and Electrical Activation in Pre-Amorphized Si Enriched with Fluorine

15th IEEE International Conference on Advanced Thermal Processing of Semiconductors

Author(s): G. Impellizzeri ; S. Mirabella ; M.G. Grimaldi ; F. Priolo ; F. Giannazzo ; V. Raineri ; E. Napolitani ; A. Camera
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Catania, Sicily, Italy
Conference Date: 2 October 2007
Page(s): 81 - 85
ISBN (CD): 978-1-4244-1228-0
ISBN (Paper): 978-1-4244-1227-3
DOI: 10.1109/RTP.2007.4383823
Regular:

In this work we investigate the promising properties of F in helping the B confinement in pre-amorphized Si, looking into the physical mechanisms acting. We studied also the effect of F on the... View More

Advertisement