IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of Negative Bias Temperature Instability in HfSiO(N)/TaN and SiO(N)/poly-Si pMOSFETs

14th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2007

Author(s): V.D. Maheta ; S. Purawat ; G. Gupta
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2007
Conference Location: Bangalore, India
Conference Date: 11 July 2007
ISBN (CD): 978-1-4244-1015-6
ISBN (Paper): 978-1-4244-1014-9
DOI: 10.1109/IPFA.2007.4378064
Regular:

In contrast to previous studies, the VT degradation during NBTI stress demonstrates power law time dependence as predicted by the R-D model as well as Arrhenius T activation for... View More

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