IEEE - Institute of Electrical and Electronics Engineers, Inc. - Salicidation Issue in 65nm Technology Development

14th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA 2007

Author(s): H. Tan ; P.K. Tan ; E. Hendarto ; S.L. Toh ; Q.F. Wang ; J.L. Cai ; Q. Deng ; T.H. Ng ; Y.W. Goh ; Z.H. Mai ; J. Lam
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2007
Conference Location: Bangalore, India
Conference Date: 11 July 2007
ISBN (CD): 978-1-4244-1015-6
ISBN (Paper): 978-1-4244-1014-9
DOI: 10.1109/IPFA.2007.4378055
Regular:

NiSi has replaced CoSi2 as the salicide material for 65 nm technology and beyond mainly due to its low salicide resistance for the narrow line width structures. However, it may bring... View More

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