IEEE - Institute of Electrical and Electronics Engineers, Inc. - The study of low frequency noise of single-walled carbon nanotube transistors

65th Device Research Conference

Author(s): Sunkook Kim ; D. Chang ; Yi Xuan ; Peide Ye ; S. Mohammadi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2007
Conference Location: Notre Dame, IN, USA
Conference Date: 18 June 2007
Page(s): 263 - 264
ISBN (CD): 978-1-4244-1102-3
ISBN (Paper): 978-1-4244-1101-6
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2007.4373746
Regular:

In this paper, we report a top gate SWNT-FET with reduced hysteresis in the IV characteristics and extremely low 1/f noise. We have also investigated the source of 1/f noise in these devices and... View More

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