IEEE - Institute of Electrical and Electronics Engineers, Inc. - Memory Effects in Metal-Oxide-Semiconductor Capacitors Incorporating Dispensed Highly Mono-disperse One-Nanometer Silicon Nanoparticles

65th Device Research Conference

Author(s): O.M. Nayfeh ; D.A. Antoniadis ; K. Mantey ; M.H. Nayfeh
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2007
Conference Location: Notre Dame, IN, USA
Conference Date: 18 June 2007
Page(s): 219 - 220
ISBN (CD): 978-1-4244-1102-3
ISBN (Paper): 978-1-4244-1101-6
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2007.4373726
Regular:

MOS capacitors incorporating ex-situ produced, colloidal, highly mono-disperse, spherical, 1 nm Si nanoparticles were fabricated and evaluated for potential use as charge storage elements in... View More

Advertisement