IEEE - Institute of Electrical and Electronics Engineers, Inc. - 10 W/mm and High PAE Field-plated AlGaN/GaN HEMTs at Ka-band with n+GaN Source Contact Ledge

65th Device Research Conference

Author(s): J.S. Moon ; P. Hashimoto ; D. Wong ; M. Hu ; M. Antcliffe ; C. McGuire ; M. Micovic ; P. Willadsen ; D. Chow
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 2007
Conference Location: Notre Dame, IN, USA
Conference Date: 18 June 2007
Page(s): 33 - 34
ISBN (CD): 978-1-4244-1102-3
ISBN (Paper): 978-1-4244-1101-6
ISSN (Paper): 1548-3770
DOI: 10.1109/DRC.2007.4373638
Regular:

The paper reports small-signal and large-signal performance of 140 nm gatelength field-plated AlGaN/GaN HEMTs at Ka-band frequencies, in which the AlGaN/GaN HEMTs were fabricated with n+ GaN... View More

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