IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of High Temperature Anneals and 60Co Gamma Ray Irradiation on Strained Silicon-on-Insulator (sSOI)

2007 IEEE International SOI Conference

Author(s): K. Park ; M. Canonico ; G.K. Celler ; M. Seacrist ; J. Chan ; J. Gelpey ; K.E. Holbert ; S. Nakagawa ; M. Tajima ; D.K. Schroder
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Indian Wells, CA, USA
Conference Date: 1 October 2007
Page(s): 69 - 70
ISBN (CD): 978-1-4244-0880-1
ISBN (Paper): 978-1-4244-0879-5
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2007.4357856
Regular:

Strained silicon-on-insulator (sSOI) was exposed to high-temperature (1200-1350degC) annealing and high-dose 60Co gamma-ray irradiation (51.5 kGy) to study the tenacity of the... View More

Advertisement