IEEE - Institute of Electrical and Electronics Engineers, Inc. - Measurement of Thermal Time Constant in 65-nm PD-SOI Technology with Sub-ns Resolution
2007 IEEE International SOI Conference
Author(s): | M.B. Ketchen ; Kai Xiu ; M. Bhushan |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 October 2007 |
Conference Location: | Indian Wells, CA, USA |
Conference Date: | 1 October 2007 |
Page(s): | 53 - 54 |
ISBN (CD): | 978-1-4244-0880-1 |
ISBN (Paper): | 978-1-4244-0879-5 |
ISSN (Paper): | 1078-621X |
DOI: | 10.1109/SOI.2007.4357848 |
Regular:
In PD-SOI the oxide layer between MOSFETs and the underlying silicon substrate presents a thermal resistance that can lead to significant temperature rise for power dissipating devices. This can... View More