IEEE - Institute of Electrical and Electronics Engineers, Inc. - Measurement of Thermal Time Constant in 65-nm PD-SOI Technology with Sub-ns Resolution

2007 IEEE International SOI Conference

Author(s): M.B. Ketchen ; Kai Xiu ; M. Bhushan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Indian Wells, CA, USA
Conference Date: 1 October 2007
Page(s): 53 - 54
ISBN (CD): 978-1-4244-0880-1
ISBN (Paper): 978-1-4244-0879-5
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2007.4357848
Regular:

In PD-SOI the oxide layer between MOSFETs and the underlying silicon substrate presents a thermal resistance that can lead to significant temperature rise for power dissipating devices. This can... View More

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