IEEE - Institute of Electrical and Electronics Engineers, Inc. - Study of Fin Profiles and MuGFETs built on SOI Wafers with a Nitride-Oxide Buried Layer (NOx-BL) as the Buried Insulator Layer

2007 IEEE International SOI Conference

Author(s): P. Patruno ; M. Kostrzewa ; K. Landry ; Weize Xiong ; C.R. Cleavelin ; Che-Hua Hsu ; M. Ma ; J.-P. Colinge
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Indian Wells, CA, USA
Conference Date: 1 October 2007
Page(s): 51 - 52
ISBN (CD): 978-1-4244-0880-1
ISBN (Paper): 978-1-4244-0879-5
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2007.4357847
Regular:

Multiple-gate-MOSFETs (MuGFET) have better short-channel effects (SCE) control than planar MOSFET and MuGFETs are good candidates to replace planar bulk MOSFET for low power applications. A... View More

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