IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of Fluorine Implant on Threshold Voltage for Metal Gate FDSOI and MuGFET

2007 IEEE International SOI Conference

Author(s): W. Xiong ; C.H. Hsu ; C.R. Cleavelin ; M. Ma ; P. Patruno ; C.-W. Lee ; R. Yan ; D. Lederer ; A. Afzalian ; J.P. Colinge
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Indian Wells, CA, USA
Conference Date: 1 October 2007
Page(s): 35 - 36
ISBN (CD): 978-1-4244-0880-1
ISBN (Paper): 978-1-4244-0879-5
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2007.4357840
Regular:

The origin of the large Vt shift observed in planar FDSOI is the creation of negative charge states in the BOX by F implant. F implant is a suitable approach for planar FDSOI SoC integration with... View More

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