IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling and Simulation of Poly-Space Effects in Uniaxially-Strained Etch Stop Layer Stressors

2007 IEEE International SOI Conference

Author(s): Lixin Ge ; V. Adams ; K. Loiko ; D. Tekleab ; Xiang-Zheng Bo ; M. Foisy ; V. Kolagunta ; S. Veeraraghavan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Indian Wells, CA, USA
Conference Date: 1 October 2007
Page(s): 25 - 26
ISBN (CD): 978-1-4244-0880-1
ISBN (Paper): 978-1-4244-0879-5
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2007.4357835
Regular:

We develop, for the first time, a compact and scalable model to account for the poly-space effects (PSEs) in uniaxially-strained etch stop layer (ESL) stressors. The model is based on... View More

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