IEEE - Institute of Electrical and Electronics Engineers, Inc. - An Embedded Silicon-Carbon S/D Stressor CMOS Integration on SOI with Enhanced Carbon Incorporation by Laser Spike Annealing

2007 IEEE International SOI Conference

Author(s): P. Grudowski ; V. Dhandapani ; S. Zollner ; D. Goedeke ; K. Loiko ; D. Tekleab ; V. Adams ; G. Spencer ; H. Desjardins ; L. Prabhu ; R. Garcia ; M. Foisy ; D. Theodore ; M. Bauer ; D. Weeks ; S. Thomas ; A. Thean ; B. White
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 2007
Conference Location: Indian Wells, CA, USA
Conference Date: 1 October 2007
Page(s): 17 - 18
ISBN (CD): 978-1-4244-0880-1
ISBN (Paper): 978-1-4244-0879-5
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2007.4357831
Regular:

We report a CMOS-compatible embedded silicon-carbon (eSiC) source/drain stressor technology with NMOS performance enhancement. The integration includes up to 2.6% substitutional carbon... View More

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