IEEE - Institute of Electrical and Electronics Engineers, Inc. - TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory

2007 IEEE Radiation Effects Data Workshop

Author(s): T.R. Oldham ; M. Friendlich ; J.W. Howard ; M.D. Berg ; H.S. Kim ; T.L. Irwin ; K.A. LaBel
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2007
Conference Location: Honolulu, HI, USA
Conference Date: 23 July 2007
Page(s): 221 - 225
ISBN (Paper): 978-1-4244-1464-2
ISSN (Electronic): 2154-0535
ISSN (Paper): 2154-0519
DOI: 10.1109/REDW.2007.4342570
Regular:

Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts... View More

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