IEEE - Institute of Electrical and Electronics Engineers, Inc. - Total Ionizing Dose Testing of SiGe 7HP discrete Heterojunction Bipolar Transistors for ELDRS Effects

2007 IEEE Radiation Effects Data Workshop

Author(s): D.L. Hansen ; S. Pong ; P. Rosenthal ; J. Gorelick
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 July 2007
Conference Location: Honolulu, HI, USA
Conference Date: 23 July 2007
Page(s): 215 - 220
ISBN (Paper): 978-1-4244-1464-2
ISSN (Electronic): 2154-0535
ISSN (Paper): 2154-0519
DOI: 10.1109/REDW.2007.4342569
Regular:

Thirty discrete heterojunction bipolar transistors fabricated in IBM's SiGe 7HP process were irradiated at dose rates of 0.013 rad(Si)/s, 0.11 rad(Si)/s and 171 rad(Si)/s to determine their... View More

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