IEEE - Institute of Electrical and Electronics Engineers, Inc. - Optimized Extraction of MOS Model Parameters

Author(s): D.E. Ward ; K. Doganis
Sponsor(s): IEEE Council on Electronic Design Automation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 October 1982
Volume: 1
Page(s): 163 - 168
ISSN (Paper): 0278-0070
ISSN (Online): 1937-4151
DOI: 10.1109/TCAD.1982.1270007
Regular:

A common problem faced by designers in simulating MOS circuits is the specification of model parameters. Typical parameter extraction procedures determine parameters sequentially, ignoring many of... View More

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