IEEE - Institute of Electrical and Electronics Engineers, Inc. - Submicrometer MOSFET Structure for Minimizing Hot-Carrier Generation

Author(s): E. Takeda ; H. Kume ; T. Toyabe ; S. Asai
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1982
Volume: 17
Page(s): 241 - 248
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/JSSC.1982.1051724
Regular:

This paper reports on investigation of channel hot-carrier generation for various device structures. The dependence of channel hot-carrier generation on MOSFET structure are characterized by... View More

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