IEEE - Institute of Electrical and Electronics Engineers, Inc. - Deep-Implant 1-/spl mu/m MOSFET Structure with Improved Threshold Control for VLSI Circuitry

Author(s): L. Risch ; C. Werner ; W. Muller ; A.W. Wieder
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1982
Volume: 17
Page(s): 231 - 236
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/JSSC.1982.1051722
Regular:

MOSFET structures with an optimized doping profile show improved threshold control and subthreshold performance. This is achieved by a low-dose shallow implant defining the level of the threshold... View More

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