IEEE - Institute of Electrical and Electronics Engineers, Inc. - Composite TiSi/sub 2//n+ Poly-Si Low-Resistivity Gate Electrode and Interconnect for VLSI Device Technology

Author(s): K.L. Wang ; T.C. Holloway ; R.F. Pinizzotto ; Z.P. Sobczak ; W.R. Hunter ; A.F. Tasch
Sponsor(s): IEEE Solid-State Circuits Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 April 1982
Volume: 17
Page(s): 177 - 183
ISSN (Paper): 0018-9200
ISSN (Online): 1558-173X
DOI: 10.1109/JSSC.1982.1051713
Regular:

A composite polycide structure consisting of refractory metal silicide film on top of polysilicon has been considered as a replacement for polysilicon as a gate electrode and interconnect line in... View More

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