IEEE - Institute of Electrical and Electronics Engineers, Inc. - A sub-nanosec, oxide isolated ISL technology

Author(s): P.C.T. Roberts ; D.R. Lamb ; R. Belt ; D. Bostick ; S. Pai ; D. Burbank
Sponsor(s): IEEE Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 February 1981
Volume: 2
Page(s): 28 - 29
ISSN (Paper): 0741-3106
ISSN (Online): 1558-0563
DOI: 10.1109/EDL.1981.25328
Regular:

An oxide isolated Integrated Schottky Logic (ISL) gate has been designed and fabricated using 1.25 µm minimum goemetries and a 1 µm thick epitaxy layer. Computer simulations and experimental... View More

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