IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effects of ambipolar excess carrier diffusion in pulsed laser annealing of semiconductors

Author(s): Dae Kim ; D. Kwong
Sponsor(s): IEEE Lasers and Electro-Optics Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 December 1981
Volume: 17
Page(s): 2,448 - 2,449
ISSN (Paper): 0018-9197
ISSN (Online): 1558-1713
DOI: 10.1109/JQE.1981.1070757
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