IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 25-W 5-GHz GaAs FET Amplifier for a Microwave Landing System

Author(s): K. Honjo ; Y. Takayama
Sponsor(s): IEEE Microwave Theory and Techniques Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 June 1981
Volume: 29
Page(s): 579 - 582
ISSN (Paper): 0018-9480
ISSN (Online): 1557-9670
DOI: 10.1109/TMTT.1981.1130396
Regular:

A 25-W 29-dB gain 5-GHz GaAs FET amplifier has been developed which can be used for a transmitter in the Microwave Landing System. By using 10-W class practical internally matched GaAs FET's... View More

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