IEEE - Institute of Electrical and Electronics Engineers, Inc. - Modeling and minimization of PMOS NBTI effect for robust nanometer design

2006 Design Automation Conference

Author(s): R. Vattikonda ; Wenping Wang ; Yu Cao
Sponsor(s): SiCda
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: San Francisco, CA, USA
Conference Date: 24 July 2006
Page(s): 1,047 - 1,052
ISBN (Paper): 1-59593-381-6
ISSN (Paper): 0738-100X
DOI: 10.1145/1146909.1147172
Regular:

Negative bias temperature instability (NBTI) has become the dominant reliability concern for nanoscale PMOS transistors. In this paper, a predictive model is developed for the degradation of NBTI... View More

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