IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-organized (111) faceted NiSi2 source and drain for advanced SOI MOSFETs

Extended Abstracts of the Sixth International Workshop on Junction Technology

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Self-organized (111) faceted NiSi₂ source and drain structure with segregated dopants in the NiSi₂/Si interfaces has been proposed for aggressively scaled SOI MOSFETs. The... View More

Self-organized (111) faceted NiSi₂ source and drain structure with segregated dopants in the NiSi₂/Si interfaces has been proposed for aggressively scaled SOI MOSFETs. The advantages of this source and drain structure are a superior short-channel effect (SCE) immunity and a very small parasitic resistance. The SCE is suppressed by a trapezoidal shape of the channel and by a small variation in the channel length that is obtained thanks to the epitaxial growth of NiSi₂ on Si. The significant effects of the channel shape and the variation-free channel length are also confirmed by the numerical simulation. Owing to the low-temperature annealing at 600degC for NiSi₂ formation and dopants activation, wider selections of gate metal and high-k gate dielectric are possible. Moreover, NiSi₂ is the most Si-rich phase among nickel silicides family and thermally stable. Self-organized (111) faceted NiSi ₂ source/drain structure is thus quite promising for future CMOS devices

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Author(s):	N. Mise ; Y. Watanabe ; S. Migita ; T. Nabatame ; H. Satake ; A. Toriumi
Publisher:	IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date:	1 January 2006
Conference Location:	Shanghai, China
Conference Date:	15 May 2006
Page(s):	170 - 175
ISBN (Paper):	1-4244-0047-3
DOI:	10.1109/IWJT.2006.220885