IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-organized (111) faceted NiSi2 source and drain for advanced SOI MOSFETs
Extended Abstracts of the Sixth International Workshop on Junction Technology
Author(s): | N. Mise ; Y. Watanabe ; S. Migita ; T. Nabatame ; H. Satake ; A. Toriumi |
Publisher: | IEEE - Institute of Electrical and Electronics Engineers, Inc. |
Publication Date: | 1 January 2006 |
Conference Location: | Shanghai, China |
Conference Date: | 15 May 2006 |
Page(s): | 170 - 175 |
ISBN (Paper): | 1-4244-0047-3 |
DOI: | 10.1109/IWJT.2006.220885 |
Regular:
Self-organized (111) faceted NiSi2 source and drain structure with segregated dopants in the NiSi2/Si interfaces has been proposed for aggressively scaled SOI MOSFETs. The... View More