IEEE - Institute of Electrical and Electronics Engineers, Inc. - Self-organized (111) faceted NiSi2 source and drain for advanced SOI MOSFETs

Extended Abstracts of the Sixth International Workshop on Junction Technology

Author(s): N. Mise ; Y. Watanabe ; S. Migita ; T. Nabatame ; H. Satake ; A. Toriumi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2006
Conference Location: Shanghai, China
Conference Date: 15 May 2006
Page(s): 170 - 175
ISBN (Paper): 1-4244-0047-3
DOI: 10.1109/IWJT.2006.220885
Regular:

Self-organized (111) faceted NiSi2 source and drain structure with segregated dopants in the NiSi2/Si interfaces has been proposed for aggressively scaled SOI MOSFETs. The... View More

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