IEEE - Institute of Electrical and Electronics Engineers, Inc. - Copper/low-k process characterization for 90nm technology using SEM and TEM imaging

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits

Author(s): G. Zimmermann ; W.T. Chang ; T.I. Shih ; D. Fan
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Singapore, Singapore
Conference Date: 27 June 2005
Page Count: 5
Page(s): 171 - 175
ISBN (Paper): 0-7803-9301-5
DOI: 10.1109/IPFA.2005.1469155
Regular:

Artificial vertical and lateral shrinkage of different carbon-doped oxide (CDO) low-k materials is observed for electron beam exposure. The effect depends on SEM and TEM imaging conditions and... View More

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