IEEE - Institute of Electrical and Electronics Engineers, Inc. - 20nm gate bulk-finFET SONOS flash

International Electron Devices Meeting 2005

Author(s): Jiunn-Ren Hwang ; Tsung-Lin Lee ; Huan-Chi Ma ; Tzyh-Cheang Lee ; Tang-Hsuan Chung ; Chang-Yun Chang ; Sheng-Da Liu ; Baw-Ching Perng ; Ju-Wang Hsu ; Ming-Yong Lee ; Chih-Yuan Ting ; Chien-Chao Huang ; Ji-Hua Wang ; Jyu-Horng Shieh ; Fu-Liang Yang
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Washington, DC, USA
Conference Date: 5 December 2005
Page Count: 4
Page(s): 154 - 157
ISBN (Paper): 0-7803-9268-X
DOI: 10.1109/IEDM.2005.1609293
Regular:

High-performance FinFET SONOS (silicon-oxide-nitride-oxide-silicon) flash cells with gate length down to 20nm have been fabricated and operated successfully on bulk-silicon substrate for... View More

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