IEEE - Institute of Electrical and Electronics Engineers, Inc. - Degradation of GaAs MESFETs in Radiation Environments

Author(s): R.J. Gutmann ; J.M. Borrego
Sponsor(s): IEEE Reliability Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 August 1980
Volume: R-29
Page(s): 232 - 236
ISSN (Paper): 0018-9529
ISSN (Online): 1558-1721
DOI: 10.1109/TR.1980.5220808
Regular:

The effects of gamma and neutron irradiation on lownoise, GaAs MESFETs are reviewed, with emphasis on microwave amplifier characterisitics. With gamma irradiation, the amplifier noise figure... View More

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