IEEE - Institute of Electrical and Electronics Engineers, Inc. - Influence of carrier statistics on InGaN/GaN device performance

2004 IEEE International Conference on Semiconductor Electronics

Author(s): D.S. Sizov ; V.S. Sizov ; A.V. Fomin ; V.V. Lundin ; A.F. Tsatsul'nikov ; E.E. Zavarin ; N.N. Ledentsov
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2004
Conference Location: Kuala Lumpur, Malaysia
Conference Date: 7 December 2004
ISBN (Paper): 0-7803-8658-2
DOI: 10.1109/SMELEC.2004.1620859
Regular:

We investigated carrier statistics of highly efficient InGaN/GaN devices based on quantum dots. We demonstrate that delocalized carriers in both InGaN residual quantum well and GaN matrix are... View More

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