IEEE - Institute of Electrical and Electronics Engineers, Inc. - Examination and improvement of reading disturb characteristics of a surrounded gate STTM memory cell

IEEE Conference on Nanotechnology

Author(s): S.J. Ahn ; K.H. Koh ; K.W. Kwon ; S.J. Baek ; Y.N. Hwang ; G.T. Jung ; H.S. Jung ; K. Kim
Sponsor(s): IEEE Nanotechnol. Council
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: San Francisco, CA, USA, USA
Conference Date: 12 August 2003
Volume: 2
Page Count: 3
ISBN (Paper): 0-7803-7976-4
DOI: 10.1109/NANO.2003.1230963
Regular:

This paper introduces a novel surrounded gate STTM cell technology to improve retention and read disturb characteristics. In the memory cells previously reported, the device structures limits the... View More

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