IEEE - Institute of Electrical and Electronics Engineers, Inc. - Geometry effect on power and ESD capability of LDMOS power devices

IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits

Author(s): Young Chung ; P. Besse ; M. Zecri ; B. Baird ; R. Ida ; N. Nolhier ; M. Bafleur
Sponsor(s): Univ. Cambridge
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Cambridge, UK, UK
Conference Date: 14 April 2003
Page Count: 4
Page(s): 265 - 268
ISBN (Paper): 0-7803-7876-8
DOI: 10.1109/ISPSD.2003.1225279
Regular:

Energy capability and electrostatic discharge characteristics of an LDMOS device exhibit a strong dependence on both active area and geometry of the device. It results from coupling processes... View More

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