IEEE - Institute of Electrical and Electronics Engineers, Inc. - 200V multi RESURF trench MOSFET (MR-TMOS)

IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits

Author(s): T. Kurosaki ; H. Shishido ; M. Kitada ; K. Oshima ; S. Kunori ; A. Sugai
Sponsor(s): Univ. Cambridge
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Cambridge, UK, UK
Conference Date: 14 April 2003
Page Count: 4
Page(s): 211 - 214
ISBN (Paper): 0-7803-7876-8
DOI: 10.1109/ISPSD.2003.1225266
Regular:

In this paper, we propose a new structure of trench MOSFETs, named Multi RESURF Trench MOSFETs (MR-TMOS). This structure has a deep p type pillar under the trench gate electrode. This p type... View More

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