IEEE - Institute of Electrical and Electronics Engineers, Inc. - Development of 50 mm diameter non-polar gallium nitride substrates for device applications

International Conference on Indium Phosphide and Related Materials

Author(s): H.P. Maruska ; D.W. Hill ; M.M.C. Chou ; J.J. Gallagher ; B.H. Chai ; R. Vanfleet ; J. Simmons ; A. Bhattacharyya ; I. Friel ; Tai-Chou Chen ; W. Li ; J. Cabalu ; Y. Fedyunin ; K.F. Ludwig, Jr. ; T.D. Moustakas
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 12 May 2003
Page Count: 4
Page(s): 567 - 570
ISBN (Paper): 0-7803-7704-4
DOI: 10.1109/ICIPRM.2003.1205444
Regular:

We report the development of large 50 mm diameter free standing wafers of GaN. GaN layers up to 350 /spl mu/m thick have been grown by HVPE on lattice-matched LiAlO/sub 2/ substrates. The original... View More

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