IEEE - Institute of Electrical and Electronics Engineers, Inc. - Single crystal silicon four-terminal nano-wire shear stress gauge for nano mechanical sensors

Proceedings IEEE Sixteenth Annual International Conference on Micro Electro Mechanical Systems

Author(s): T. Toriyama ; S. Sugiyama
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Kyoto, Japan, Japan
Conference Date: 23 January 2003
Page Count: 4
Page(s): 48 - 51
ISBN (Paper): 0-7803-7744-3
ISSN (Paper): 1084-6999
DOI: 10.1109/MEMSYS.2003.1189684
Regular:

P-type single crystal silicon four-terminal nanowire shear stress gauge (Si FSSG) was fabricated by electron-beam direct writing. The piezoresistance was investigated in order to demonstrate the... View More

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