IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization and modeling of transient device behavior under CDM ESD stress

2003 Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

Author(s): J. Willemen ; A. Andreini ; V. De Heyn ; K. Esmark ; M. Etherton ; H. Gieser ; G. Groeseneken ; S. Mettler ; E. Morena ; N. Qu ; W. Soppa ; W. Stadler ; R. Stella ; W. Wilkening ; H. Wolf ; L. Zullino
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 September 2003
Conference Location: Las Vegas, NV, USA
Conference Date: 21 September 2003
Page(s): 1 - 10
ISBN (CD): 978-1-5853-7057-3
Regular:

Device physical effects that strongly influence the transient behavior during very fast, high current pulses are discussed. The effects are studied by experimental characterization and device... View More

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