IEEE - Institute of Electrical and Electronics Engineers, Inc. - Oxygen implants using water vapor as source feed gas in high and medium current implanters

Proceedings of the 2002 14th International Conference on Ion Implantation Technology

Author(s): Platow, W. ; Todorov, S.
Sponsor(s): IEEE Circuits & Syst. Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2002
Conference Location: Taos, New Mexico, USA, USA
Conference Date: 22 September 2002
Page Count: 4
Page(s): 428 - 431
ISBN (Paper): 0-7803-7155-0
DOI: 10.1109/IIT.2002.1258032
Regular:

Refractory metals used in ion sources (such as tungsten) will oxidize using ordinary oxygen bearing gases for oxygen implantation. By comparing the free energy of formation of different feed gases... View More

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