IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of indium metrology using LEXES and SIMS [semiconductor doping]

Proceedings of the 2002 14th International Conference on Ion Implantation Technology

Author(s): Kouzminov, D. ; Yupu Li ; Hunter, J. ; Graoui, H. ; Al-Bayati, A. ; Foad, M. ; Staub, P. ; Hombourger, C. ; Schuhmacher, M.
Sponsor(s): IEEE Circuits & Syst. Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2002
Conference Location: Taos, New Mexico, USA, USA
Conference Date: 22 September 2002
Page Count: 4
Page(s): 338 - 341
ISBN (Paper): 0-7803-7155-0
DOI: 10.1109/IIT.2002.1258009
Regular:

There has been increasing interest in using Indium (In+) as the channel and substrate dopant in place of the lighter boron atom. Indium is a heavier atom and hence yields a more... View More

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